ty n-channel mosfet 4v drive nch mosfet RSR010N10 ? structure ? dimensions (unit : mm) ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt3). ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 3000 RSR010N10 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 100 v gate-source voltage v gss ? 20 v continuous i d ? 1a pulsed i dp ? 4a continuous i s 0.8 a pulsed i sp 4a power dissipation p d 1w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 125 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter tsmt3 (1) (2) (3) * (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode *2 *1 *1 abbreviated symbol : zj ? 2 ? 1 (3) (1) (2) product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 100 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =100v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma - 370 520 i d =1a, v gs =10v - 400 560 i d =1a, v gs =4.5v - 410 580 i d =1a, v gs =4.0v forward transfer admittance l y fs l1 - - si d =1a, v ds =10v input capacitance c iss - 140 - pf v ds =25v output capacitance c oss - 20 - pf v gs =0v reverse transfer capacitance c rss - 12 - pf f=1mhz turn-on delay time t d(on) -6-nsi d =0.5a, v dd 50v rise time t r -9-nsv gs =10v turn-off delay time t d(off) - 22 - ns r l =100 ? fall time t f - 15 - ns r g =10 ? total gate charge q g - 3.5 - nc i d =1a, v dd 50v gate-source charge q gs - 0.9 - nc v gs =5v gate-drain charge q gd - 0.8 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =1a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * RSR010N10 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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